首页>
外国专利>
III-V AND ZN BASED FINFET STRUCTURE FORMED USING LOW TEMPERATURE DEPOSITION TECHNIQUES
III-V AND ZN BASED FINFET STRUCTURE FORMED USING LOW TEMPERATURE DEPOSITION TECHNIQUES
展开▼
机译:基于低温沉积技术的基于III-V和ZN的FINFET结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
Aspects of the present disclosure include a semiconductor structure comprising a gate layer with an associated gate dielectric thereon, and a region comprising at least one fin structure in contact with the gate layer, wherein the fin structure includes at least two distinct materials, and wherein one of the two distinct materials is a Zn based material.
展开▼