METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LAYERED PRODUCT, NITRIDE SEMICONDUCTOR LAYERED PRODUCT, METHOD FOR TESTING FILM QUALITY, AND METHOD FOR TESTING SEMICONDUCTOR GROWTH DEVICE

摘要

This method is for producing a nitride semiconductor layered product in which a thin film is homoepitaxially grown on a substrate made of crystal of a group III nitride semiconductor, the method comprising: a step for homoepitaxially growing a thin film on a substrate having, at a main surface thereof, a dislocation density of 5 × 10⁶/cm² or less, an oxygen concentration of less than 1 × 10¹⁷ at·cm^-3, and a concentration of impurities other than n-type impurities of less than 1 × 10¹⁷ at·cm^-3; and a testing step for testing the film quality of the thin film, wherein in the testing step, the film quality of the thin film is tested by detecting a deviation of the amount of reflected light having a certain wave number in the range of 1,600-1,700 cm^-1 in a reflected spectrum obtained by emitting infrared light to the thin film on the substrate, from the amount of reflected light having a certain wave number determined depending on the thickness of the thin film and the carrier concentrations of the substrate and the thin film.