SILICON CARBIDE DIODE HAVING HIGH SURGE CURRENT CAPABILITY AND MANUFACTURING METHOD THEREOF

摘要

A silicon carbide diode having high surge current capability and a manufacturing method therefor, belonging to the technical field of semiconductor device manufacturing. The silicon carbide diode comprises a semiconductor substrate. The semiconductor substrate comprises an N-type silicon carbide substrate (2) and an N-type silicon carbide epitaxial layer (3) located on the N-type silicon carbide substrate (2). A plurality of P-type well regions (6) are disposed at an upper portion inside the N-type silicon carbide epitaxial layer (3). An N-type high-resistance region (4) is disposed below or at a lower surface of the P-type well regions (6). The N-type high-resistance region (4) has a resistivity greater than that of the N-type silicon carbide epitaxial layer (3). The N-type high-resistance region (4) is disposed below the P-type well regions (6) and a plurality of grooves (5) are provided in the P-type well regions (6), or a plurality of evenly spaced block-shaped P-type regions (12) are provided in the N-type high-resistance region (4), so as to increase the surge current capability of the device under normal conduction working conditions.