SEMICONDUCTOR DEVICE HAVING NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE CHARACTERISTIC AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device having a negative differential transconductance characteristic according to an embodiment of the present invention comprises: a substrate; a gate electrode formed on the substrate; an insulation layer formed on the gate electrode; a source electrode material layer formed on the insulation layer; a semiconductor material layer formed on the insulation layer and heterogeneously bonded to the source electrode material layer; a source electrode formed on the source electrode material layer; and a drain electrode formed on the semiconductor material layer. The source electrode material layer has a work function adjustable depending on a gate voltage applied through the gate electrode and shows a negative differential transconductance characteristic, depending on a level of the gate voltage.