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机译:双负差分跨导特性:从器件到电路应用再到四元逆变器
Sungkyunkwan Univ Sch Elect & Elect Engn Suwon 440746 South Korea;
MIT Dept Mech Engn Cambridge MA 02139 USA;
Sungkyunkwan Univ Dept Semicond Syst Engn Suwon 440746 South Korea;
Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 440746 South Korea;
Sungkyunkwan Univ Dept Semicond & Display Engn Suwon 440746 South Korea;
Sungkyunkwan Univ SKKU Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;
Sungkyunkwan Univ Sch Elect & Elect Engn Suwon 440746 South Korea|Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 440746 South Korea|Sungkyunkwan Univ Dept Semicond & Display Engn Suwon 440746 South Korea|Sungkyunkwan Univ SKKU Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;
2D heterojunction; graphene; multivalued logic; negative differential transconductance; van der Waals material; vdW heterojunction; WS2; WSe2;
机译:具有用于多值逻辑电路的阶梯式栅极电介质的负差分跨导装置
机译:掺硼GaN栅极盖层的增强模式双异质结构DH-HEMT的器件特性,用于全桥逆变器电路
机译:螺旋螺旋分析模型,用双负星系加载螺旋的分散和相互作用阻抗特性,用于真空电子器件潜在应用
机译:四栅极晶体管电压控制负差分电阻器件及相关电路应用
机译:负差分电阻器件及其电路应用。
机译:基于硅的负差分跨导器件中的非凡传输特性和多值逻辑函数
机译:用于超低功耗模拟和RF应用的栅极工程对称双栅极MOS装置和电路的性能