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FERROELECTRIC MEMORY DEVICES EMPLOYING CONDUCTIVITY MODULATION OF A THIN SEMICONDUCTOR MATERIAL OR A TWO- DIMENSIONAL CHARGE CARRIER GAS AND METHODS OF OPERATING THE SAME
FERROELECTRIC MEMORY DEVICES EMPLOYING CONDUCTIVITY MODULATION OF A THIN SEMICONDUCTOR MATERIAL OR A TWO- DIMENSIONAL CHARGE CARRIER GAS AND METHODS OF OPERATING THE SAME
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机译:薄半导体材料或二维电荷载体气体的电导率调制铁电存储器件及其操作方法
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摘要
A ferroelectric memory device contains a two-dimensional semiconductor material layer having a band gap of at least 1.1 eV and at least one of a thickness of 1 to 5 monolayers of atoms of the semiconductor material or includes a two-dimensional charge carrier gas layer, a source contact contacting a first portion of the two-dimensional semiconductor material layer, a drain contact contacting a second portion of the two-dimensional semiconductor material layer, a ferroelectric memory element located between the source and drain contacts and adjacent to a first surface of the two-dimensional semiconductor material layer, and a conductive gate electrode located adjacent to the ferroelectric memory element.
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