CRYSTALLINE OXIDE THIN FILM, MULTILAYER BODY AND THIN FILM TRANSISTOR

摘要

A crystalline oxide thin film which contains elemental In, elemental Ga and elemental Ln that is composed of one or more elements that are selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and which is mainly composed of elemental In, while having an average crystal grain size D₁ of from 0.05 μm to 0.5 μm (inclusive).