首页> 外国专利> MAGNETIC JUNCTION MAGNETIC MEMORY METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS

MAGNETIC JUNCTION MAGNETIC MEMORY METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS

机译:具有改进的特性的磁结的磁结磁存储方法和系统

摘要

The method and apparatus provide a magnetic memory comprising a magnetic junction on a substrate. The apparatus includes a RIE chamber and an ion milling chamber. The chambers are connected and magnetic memory can move between the chambers without exposing the atmospheric environment. The method provides a hard mask film on the magnetic bonding films and the magnetic bonding films. The hard mask is formed from the hard mask film using RIE. The magnetic junction films define at least a portion of each magnetic junction after RIE etching, with magnetic memories ion milled without exposing the atmospheric environment. Magnetic junction is provided. The magnetic junction includes a pinned film, a nonmagnetic spacer film and a free film. The free film has a width of 20 nm or less and is switchable when the write current flows through the magnetic junction.
机译:该方法和设备提供了包括在衬底上的磁结的磁存储器。该设备包括RIE室和离子研磨室。腔室被连接,并且磁存储器可以在腔室之间移动而不暴露大气环境。该方法在磁性结合膜和磁性结合膜上提供硬掩模膜。使用RIE由硬掩模膜形成硬掩模。磁性结膜限定了RIE蚀刻之后的每个磁性结的至少一部分,其中离子存储器被离子研磨而没有暴露大气环境。提供磁性结。磁性结包括固定膜,非磁性隔离膜和自由膜。自由膜的宽度为20nm或更小,并且当写入电流流过磁性结时可自由切换。

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