CMP POST CHEMICAL MECHANICAL PLANARIZATIONCMP CLEANING

摘要

The present invention relates to a formulation which provides a high cleaning effect against: a reaction product on a surface due to the interaction of inorganic particles remaining on a semiconductor device after chemical mechanical planarization (CMP), organic residues, chemical residues, a CMP slurry and a wafer surface; and elevated levels of undesirable metal on a surface. The cleaning formulation of the CMP comprises: at least one organic acid with pH of 7 or higher; one or more polymers; a fluoride compound; and a surfactant having optionally two sulfonic acid groups.