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III-V SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
III-V SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
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机译:基于III-V选择性生长的基于III-V的材料的设备
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摘要
A first III-V material based buffer layer is deposited on the silicon substrate. The second III-V material based buffer layer is deposited on the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.
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