MOS Method for determining effective gate oxide thickness of MOS device based on first principle

摘要

The present invention provides a method for determining an effective gate oxide film thickness of a MOS device, particularly a Ge/a-Al2O3/Au MOS device structure including a semiconductor channel layer, a gate oxide film positioned on the semiconductor channel layer, and a gate electrode positioned on the gate electrode film. The method for determining an effective gate oxide film thickness of a MOS device comprises: a step of creating an atomic structure of the MOS device by using a first principle calculation method; a step of calculating an atom-projected electron state density (atom-PDOS) of the MOS device, and calculating a bandgap arrangement of the MOS device based on the calculated atom-projected electron state density; and a step of comparing the atomic structure of the MOS device and the bandgap arrangement of the MOS device to determine an effective gate oxide film. The atomic structure of the MOS device includes: a semiconductor channel atom layer consisting of a first atom; a gate electrode layer consisting of a second atom different from the first atom; and a gate oxide film atom layer positioned between the semiconductor channel atom layer and the gate electrode atom layer. The gate electrode atom layer consists of a third atom and an oxygen atom different from the first atom and the second atom, respectively.