- Nonvolatile resistance change memory using lead-free halide perovskite material

摘要

The present invention relates to a nonvolatile resistance change memory using a lead-free inorganic-inorganic halide perovskite material that can solve the environmental problems caused by the use of lead and lower thermal durability of the organic material, which is a disadvantage of the conventional halide perovskite material. will be. The present invention is a substrate; A lower electrode formed on the substrate; A resistance change layer formed on the lower electrode; And an upper electrode formed on the resistive change layer, wherein the resistive change layer includes a first inorganic metal molecule, a second inorganic metal molecule, and a halide molecule to form an AB ₂ X ₇ structure. The branches form a perovskite structure, wherein A is silver (Ag), and B is chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu) ), zinc (Zn), gallium (Ga), indium (In), titanium (Ti), germanium (Ge), cadmium (Cd), hafnium (Hf), tin (Sn) or bismuth (Bi), wherein X Is a fluorine (F), chlorine (Cl), bromine (Br), iodine (I), sulfur (S) or selenium (Se), characterized in that non-volatile resistance change using inorganic-inorganic halide perovskite material Provide memory.