Nonvolatile resistance change memory using lead-free halide perovskite material

摘要

The present invention relates to a nonvolatile resistance change memory using a lead-free inorganic-inorganic halide perovskite material that can solve the environmental problems caused by the use of lead and lower thermal durability of the organic material, which is a disadvantage of the conventional halide perovskite material. will be. The present invention is a substrate; A lower electrode formed on the substrate; A resistance change layer formed on the lower electrode; And an upper electrode formed on the resistive change layer, wherein the resistive change layer includes a first inorganic metal molecule, a second inorganic metal molecule, and a halide molecule to form an AB