首页> 外国专利> CMOS CMOS Composite Varactoy-Based Linear Small-Area Tunable Capacitor

CMOS CMOS Composite Varactoy-Based Linear Small-Area Tunable Capacitor

机译:CMOS CMOS复合基于变容线性小面积可调电容器

摘要

The present invention arranges a high linearity and a wide variable range by arranging an accumulation-mode varactor or an inversion-mode varactor in an array and controlling according to digital on/off. It relates to a tunable capacitor based on a CMOS complementary collector element that can be secured. The present invention is effective in solving the Q-factor degradation problem by arranging varactor elements in an array and controlling digital on/off to secure high linearity and a wide variable range. In addition, the present invention is arranged in a connection and array so that the accumulation-mode varactor or inversion-mode varactor is complementarily operated in a standard digital CMOS process, and is controlled by digital on/off. By doing so, there is an effect that can achieve the same performance with a small silicon area.
机译:本发明通过将累积模式变容二极管或反相模式变容二极管布置在阵列中并根据数字开/关进行控制来布置高线性度和宽可变范围。本发明涉及基于可固定的CMOS互补集电极元件的可调电容器。通过将变容二极管元件布置在阵列中并控制数字开/关以确保高线性度和宽可变范围,本发明有效地解决了Q因子劣化问题。另外,本发明以连接和阵列布置,使得累积模式变容二极管或反相模式变容二极管在标准数字CMOS工艺中互补地操作,并由数字开/关控制。通过这样做,具有可以在较小的硅面积下实现相同性能的效果。

著录项

  • 公开/公告号KR20200082623A

    专利类型

  • 公开/公告日2020-07-08

    原文格式PDF

  • 申请/专利权人 전북대학교산학협력단;

    申请/专利号KR20180173371

  • 发明设计人 임동구;김동명;

    申请日2018-12-31

  • 分类号H01L27/08;

  • 国家 KR

  • 入库时间 2022-08-21 11:06:31

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号