...
首页> 外文期刊>IEEE microwave and wireless components letters >Highly Linear Silicon-on-Insulator CMOS Digitally Programmable Capacitor Array for Tunable Antenna Matching Circuits
【24h】

Highly Linear Silicon-on-Insulator CMOS Digitally Programmable Capacitor Array for Tunable Antenna Matching Circuits

机译:用于可调天线匹配电路的高度线性绝缘体上硅CMOS数字可编程电容器阵列

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

A stacked-FET linear 4-bit silicon-on-insulator (SOI) CMOS switched capacitor array is designed for use in tunable antenna matching circuits. A New biasing strategy without negative bias voltage is proposed to circumvent drawbacks such as digital switching noise and harmonics feed-through to the antenna. The proposed switched capacitor array shows almost identical power handling capability to that of the conventional version with negative bias voltage. Compared to other works in SOI or silicon-on-sapphire (SOS) technologies, it shows a comparable or better quality factor, tuning range, power handling capability, and harmonic distortion while consuming ultra low power.
机译:堆叠式FET线性4位绝缘体上硅(SOI)CMOS开关电容器阵列设计用于可调天线匹配电路。提出了一种没有负偏置电压的新偏置策略,以克服诸如数字开关噪声和谐波馈入天线的缺点。所提出的开关电容器阵列显示出与具有负偏压的传统版本几乎相同的功率处理能力。与SOI或蓝宝石硅(SOS)技术中的其他作品相比,它在消耗超低功耗的同时,具有可比或更高的品质因数,调谐范围,功率处理能力和谐波失真。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号