A 40nm CMOS Single-Ended Switch-Capacitor Harmonic-Rejection Power Amplifier for ZigBee Application.

摘要

This thesis describes a single-ended switch-capacitor harmonic-rejection power amplifier for the 915 MHz ISM band for ZigBee applications. A multipath feed-forward harmonic-rejection technique is employed to suppress the 2 nd/3rd/4th harmonics of the switch-capacitor power amplifier (PA) by 48/17/24 dB, respectively. The measured PA peak drain efficiency is 43% at a peak output power of 8.9dBm with the harmonic-rejection enabled. This PA was implemented in a 40nm TSMC CMOS process with an active area of 180mumx700mum.