Omic contact of power semiconductor device and manufacturing method thereof

摘要

The present invention relates to an ohmic junction of a power semiconductor device and a method of manufacturing the same, wherein a Ga ₂ O ₃ region doped with an n-type having a specific resistance of 100 mΩ·cm or less, a metal layer deposited on the substrate, and a lower portion of the metal layer And an IMO layer (Interface Modified Ohmic) having an ohmic contact resistance of 5×10 ^-7 Ω·cm ² or less diffused into the Ga ₂ O ₃ region.