In-situ CIGS MANUFACTURING METHOD OF CIGS PHOTO-ABSORBER BY USING IN-SITU SPUTTERING-BASED SELENIZATION

摘要

The present invention relates to a method of forming a thin film of chalcopalite Cu(In,Ga)Se2 (CIGS) used as a light absorbing layer of a solar cell, and to a method of manufacturing a thin film by an in-situ vacuum process. To this end, a Cu-In-Ga or Cu-In-Ga-Se precursor thin film is deposited by a sputtering method, and Se is deposited thickly on the top layer, followed by a heat treatment process.Se is deposited by sputtering even during the heat treatment process. Therefore, supplementation is made so that there is no lack of Se on the thin film surface. This method has the advantage of being able to continuously manufacture a Cu(In,Ga)Se2 thin film by an in-line sputtering method.