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Integrated circuit chip method of manufacturing integrated circuit chip and integrated circuit package and display apparatus including integrated circuit chip

机译:集成电路芯片的制造方法,集成电路封装以及包括该集成电路芯片的显示装置

摘要

The integrated circuit chip includes a via contact plug extending in a vertical direction within a through hole penetrating a substrate and a device layer formed on the substrate, a via contact liner surrounding the via contact plug, and integrally connected to the via contact liner And a connection pad liner extending in a horizontal direction along a rear surface of the substrate, a dummy bump structure integrally connected to the via contact plug, and a bump structure connected to the connection pad liner. In a method of manufacturing an integrated circuit chip, a first connection metal layer is formed inside and outside the through hole, and covers the UBM layer in the through hole, and a second connection metal layer integrally connected to the first connection metal layer. And a third connection metal layer covering the UBM layer on the connection pad liner.
机译:该集成电路芯片包括:通孔接触塞,该通孔接触塞在垂直方向上延伸穿过贯穿基板的通孔;以及器件层,该器件层形成在基板上;通孔接触衬垫,其围绕通孔接触塞,并且与通孔接触衬垫一体地连接。沿着衬底的后表面在水平方向上延伸的连接焊盘衬里,一体地连接到通孔接触塞的虚设凸块结构,以及连接到连接焊盘衬里的凸块结构。在制造集成电路芯片的方法中,第一连接金属层形成在通孔的内部和外部,并覆盖通孔中的UBM层,并且第二连接金属层一体地连接至第一连接金属层。第三连接金属层覆盖连接垫衬板上的UBM层。

著录项

  • 公开/公告号KR20200108668A

    专利类型

  • 公开/公告日2020-09-21

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR20190027635

  • 申请日2019-03-11

  • 分类号H01L23/498;H01L23;H01L23/48;H01L23/485;H01L23/492;H01L23/528;H01L25/065;

  • 国家 KR

  • 入库时间 2022-08-21 11:06:00

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