FSAV BEOL SEMICONDUCTOR BACK END OF LINE BEOL INTERCONNECT USING MULTIPLE MATERIALS IN A FULLY SELF-ALIGNED VIA FSAV PROCESS

摘要

Embodiments of systems and methods for semiconductor back end of line (BEOL) interconnection using multiple materials in a fully self-aligning via (FSAV) process. In an embodiment, the method includes receiving a substrate having a patterned structure formed on a surface of the substrate. The method may also include depositing a first interconnect material in the first region of the patterned structure. Such methods also include depositing a second interconnect material in a second region of the patterned structure, wherein the first interconnect material is different from the second interconnect material, and the first region and the second region are of the patterned structures. Including a common layer-may include.