Large-scale synthesis of 2D semiconductors by epitaxial phase transition

摘要

There is a method of forming an oxide or chalcogenide 2D semiconductor. The method includes the step 100 of growing a precursor epitaxy oxide or chalcogenide film 220 on a substrate 223 by an immersion method, and a sulfur atom to obtain an oxide or chalcogenide 2D semiconductor 520. And sulfiding (102) the precursor epitaxy oxide or chalcogenide film 220 by replacing an oxygen atom. The oxide or chalcogenide 2D semiconductor 520 has an epitaxy structure derived from the precursor epitaxy oxide or chalcogenide film 220.