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Optical properties and structural phase transitions of lead-halide based inorganic-organic 3D and 2D perovskite semiconductors under high pressure

机译:高压下卤化铅基无机有机3D和2D钙钛矿半导体的光学性质和结构相变

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Optical absorption, photoluminescence and Raman scattering of lead-halide based inorganic-organic perovskite semiconductors were measured under quasi-hydrostatic pressure at room temperature. For the 3D perovskite semiconductor, (CH3NH3)PbBr3, the free exciton photoluminescence band exhibits redshifts with pressure, and jumps to a higher energy by 0.07 eV at 0.8 GPa, which is associated with a phase transition from a cubic to an orthorhombic structure confirmed by Raman scattering. Above the phase transition pressure, the exciton band shows blue-shifts with further increasing pressure, and eventually disappears above 4.7 GPa. The results are compared with those for the 2D perovskite semiconductor, (C4H9NH3)(2)PbI4. First principles pseudopotential calculations were performed to investigate changes in octahedral distortion and electronic band structures with pressure. The calculations have explained the origins of the intriguing changes in the electronic states with pressure in view of bonding characters between atomic orbitals in octahedra.
机译:在室温下在准静水压力下测量了基于卤化铅的无机-有机钙钛矿半导体的光吸收,光致发光和拉曼散射。对于3D钙钛矿半导体(CH3NH3)PbBr3,自由激子光致发光带在压力下表现出红移,并在0.8 GPa时跃升至0.07 eV的更高能量,这与从立方到正交晶体的相变有关拉曼散射。在相变压力以上,激子带随压力的进一步增加呈现蓝移,最终在4.7 GPa以上消失。将结果与2D钙钛矿半导体(C4H9NH3)(2)PbI4的结果进行比较。进行了第一性原理的准电势计算,以研究八面体畸变和电子带结构随压力的变化。考虑到八面体中原子轨道之间的键合特性,这些计算解释了电子状态随压力而变化的起源。

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