Film forming composition for semiconductor lithography process, silicon-containing film, and resist pattern forming method

摘要

An object of the present invention is to provide a film-forming composition for a semiconductor lithography process, a silicon-containing film, and a method of forming a resist pattern capable of forming a silicon-containing film having excellent resolution of a resist film, a collapse suppression of a resist pattern, and resistance to etching an oxygen-based gas. have. The present invention is a film-forming composition for a semiconductor lithography process containing a compound having a Si-H bond and an orthoester. The compound has, for example, at least one type of first structural unit selected from the group consisting of a structural unit represented by the following formula (1-1) and a structural unit represented by the following formula (1-2). In the following formulas (1-1) and (1-2), R ¹ and R ² are monovalent organic groups having 1 to 20 carbon atoms, hydroxy groups, or halogen atoms. R ³ is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms bonded to two Si atoms.