In a heterojunction avalanche photodiode using beta-gallium oxide (β-Ga 2 O 3 ) including an oxidation electrode and a reduction electrode, a material doped with p + type gallium nitride in contact with the oxidation electrode on the oxidation electrode 1 gallium nitride layer, located on the first gallium nitride layer, a second gallium nitride layer doped with p-type gallium nitride, an n-type beta-oxidation in which the second gallium nitride layer is PN-bonded on the second gallium nitride layer It is located on the first gallium oxide layer doped with gallium, the first gallium oxide layer, and is located on the top of the second gallium oxide layer and the second gallium oxide layer doped with n - type beta-gallium oxide, and is located on top of the n + type beta. -Disclosed is a photodiode comprising a third gallium oxide layer doped with gallium oxide.
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机译：在使用包含氧化电极和还原电极的β-氧化镓（β-Ga 2 O 3 ）的异质结雪崩光电二极管中，掺杂有p +的材料型氮化镓与氧化电极上的氧化电极接触，位于第一氮化镓层上的氮化镓层，掺杂有p型氮化镓的第二氮化镓层，n型β-氧化其中第二氮化镓层PN键合在第二氮化镓层上，它位于掺杂有镓的第一氧化镓层，第一氧化镓层上，并且位于第二氧化镓层和第二氧化镓层的顶部。第二个掺杂有n -型β-氧化镓的氧化镓层，位于n + 型β的顶部。公开了一种光电二极管，其包括掺杂有氧化镓的第三氧化镓层。
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