APPARATUS AND METHOD FOR SELECTIVE OXIDATION AT LOWER TEMPERATURE USING REMOTE PLASMA SOURCE

摘要

A device and method for selectively oxidizing silicon are described. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal treatment chamber having a plurality of walls, a first inlet connection and a second inlet connection, the walls defining a treatment area within the processing chamber; A substrate support in the processing chamber; A hydrogen source connected with the first inlet connection; A heat source connected with the hydrogen source; And a remote plasma source in communication with the second inlet connection and the oxygen source. A method for selective oxidation of nonmetallic surfaces includes positioning a substrate in a processing chamber at a temperature of less than 800 ° C .; Flowing hydrogen into the processing chamber; Generating a remote plasma comprising oxygen; Mixing the remote plasma with hydrogen gas in the processing chamber to produce an activated processing gas; And exposing the substrate to activated gas.