Power semiconductor module with a switching device and power semiconductor device with such a power semiconductor module

摘要

Power semiconductor module (1) with a switching device (10), which has a substrate (2), a power semiconductor component (26) and a film stack (3), and with a pressure device (5) designed to be movable in the normal direction (N) of the substrate (2) , The substrate (2) has electrically conductive conductor tracks (22a, 22b), the power semiconductor component (26) being arranged on a first conductor track (22a) of the substrate (2) and making electrical contact with it, the film stack (3 ) has at least one electrically conductive and at least one electrically non-conductive film (31, 32) which are stacked on top of one another, the film stack (3) having a first main surface (300) facing the substrate (2) and a first main surface (300) Has facing away from the second main surface (320), wherein the film stack (3) with the power semiconductor component (26) is electrically conductively contacted, wherein the pressure device (5) a pressure body (51) and has a first metal spring (52a), the pressure body (51) exerting a force (F) on the first metal spring (52a) in the direction of the substrate (2), the first metal spring (52a) acting on a first region (322) of the second main surface (320), via a pressure transmission surface (52a ') of the first metal spring (52a) facing the first region (322) of the second main surface (320), exerts pressure in the direction of the power semiconductor component (26) and the first region ( 322) of the second main surface (320) and the pressure transmission surface (52a ') of the first metal spring (52a), in the normal direction (N) of the substrate (2), above a first surface (26a) of the power semiconductor component (26) facing away from the substrate (2) ), aligned with the first surface (26a) of the line semiconductor component (26), the first metal spring (52a) being designed as a compression spring, the pressure body (51) being made of plastic, the first metal spring (52 a) is connected to the pressure body (51) by injecting a portion of the first metal spring (52a) into the pressure body (51), the first main area (322) of the second main surface (320) and the first metal spring (52a ) a first pressure distribution body (53a) is arranged, the first pressure distribution body (53a) being electrically non-conductive.