Power semiconductor module with a switching device and power semiconductor device with such a power semiconductor module

摘要

The invention relates to a power semiconductor module having a switching device which has a substrate, a power semiconductor component and a film stack, and having a pressure device which is designed to be movable in the normal direction of the substrate, wherein the film stack has a first main surface facing the substrate and a second main surface facing away from the substrate the pressure device has a pressure body and a first metal spring, wherein the pressure body exerts a force on the first metal spring in the direction of the substrate, wherein the first metal spring on a first region of the second main surface, over a first transmission area of the first main surface facing the first Metal spring, pressure in the direction of the power semiconductor component exerts and in this case the first region of the second main surface and the pressure transmitting surface of the first metal spring, in the normal direction of the substrate, above a sub Strat remote first surface of the power semiconductor device, aligned with the first surface of the line semiconductor device, are arranged.