High-side gate driver circuit, semiconductor module and three-phase inverter system

摘要

High-side gate driver circuit (103) for driving a high-side switching element (Q1), wherein the high-side gate driver circuit (103) comprises: - pulse generation circuits (11, 12) which are configured to apply a first pulse generate synchronized with an input signal; and- level shift circuits (17, 18) configured to shift a level of a reference voltage for the first pulse to a supply voltage (VB) of the high-side switching element (Q1), wherein: - the level shift circuits (17, 18) MOSFETs ( 176, 186), which are each driven by the first pulse, - the high-side gate driver circuit (103) comprises: - a mask signal generation circuit (26) which is configured to generate a mask signal (M) that is shown in a period in which the source potential of the MOSFETs (176, 186) becomes high level; and reshot circuits (36, 37) configured when the first pulse is fed to the level shift circuits (17, 18) during a mask period which is a period in which the mask signal (M) is a high level, feed a second pulse into the level shift circuits (17, 18) after the mask period, - the level shift circuits (17, 18) furthermore contain current mirror circuits in which the primary sides are each connected to the source terminals of the MOSFETs (176, 186), and Base signals from bipolar transistors (174, 175) forming the current mirror circuits are fed into the mask signal generation circuit (26).