Film forming method and method of manufacturing a semiconductor device

摘要

This discloses film formation methods for forming an oxide film on a substrate, the oxide film having germanium doped therein and having a property of a conductor or a semiconductor. The film formation method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material containing a constituent element of the oxide film and an organic germanium compound may be dissolved in the solution.