PROCESS FOR PRODUCING A GLUED GLUE OF SILICON AND GLUE GLUE OF SILICON

摘要

There is provided a method of producing a bonded wafer of silicon (100) and a bonded wafer of silicon (100) which allow the maintenance of a getterization capacity after the bonded wafer of silicon (100) has been produced and even after the bonded silicon wafer (100) has undergone another heat treatment in a device forming process or the like. The method can include a bonding step consisting in bonding a surface of a wafer (110) used for a support substrate and a surface of a wafer (120) used for an active layer (125) according to a bonding method under vacuum at normal temperature; a thinning step consisting in thinning the wafer (120) used for the active layer (125) and in converting the thinned wafer (120) into the active layer (125); and a heat treatment step, carried out after the bonding step.Abstract figure: Figure 1