STRUCTURE WITH SUPERIMPOSED SEMICONDUCTOR BARS HAVING A UNIFORM SEMICONDUCTOR SHELL

摘要

Realization of a transistor structure, with semiconductor bars arranged one above the other and capable of forming at least one channel region of the transistor, the method comprising a growth of a semiconductor material around semi bars -conductors arranged one above the other, while retaining during this growth a dummy bar (15) located above the semiconductor bars (5y 5b, 5c) in order to limit the thickness of semiconductor material formed and / or make this thickness uniform from one bar to another.