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Method for Forming a Heterojunction Bipolar Transistor and a Heterojunction Bipolar Transistor Device
Method for Forming a Heterojunction Bipolar Transistor and a Heterojunction Bipolar Transistor Device
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机译:形成异质结双极晶体管的方法和异质结双极晶体管器件
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摘要
A method for forming a heterojunction bipolar transistor is provided. The method includes (a) forming a doped region in a group IV semiconductor layer of a substrate; (b) forming an epitaxially grown III-V semiconductor body on a surface portion of the doped region, the body extending from the surface portion and protruding vertically above the doped region, wherein the doped region and the body forms a first sub-collector part and a second sub-collector part, respectively; and (c) forming an epitaxially grown III-V semiconductor layer stack on the body, the layer stack comprising a collector, a base and an emitter. There is further provided a heterojunction bipolar transistor device.
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