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The selective synthesis of single-crystalline CdS nanobelts and nanowires by thermal evaporation at lower temperature

机译:低温热蒸发选择性合成CdS单晶纳米带和纳米线

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摘要

CdS nanobelts and nanowires were successfully synthesized by simple thermal evaporation of CdS powder at a temperature as low as 650 degrees C, using pure H-2 as a carrier gas. The morphology of the products could be conveniently controlled by adjusting the deposition parameters. Electron microscopy studies of the materials showed that the single-crystalline CdS nanowires have a diameter of 200 nm and a length of tens of micrometres, and the nanobelts are 100 - 200 nm in width, 30 nm in thickness and tens of micrometres in length. High-resolution transmission electron microscopy demonstrated that the nanobelts, which are different from the nanowires growing along the [0001] direction, have three types of growth direction: [2 (1) over bar(1) over bar0], [01 (1) over bar0] and [0001]. It is demonstrated that a reductive carrier gas, such as hydrogen, plays an important role in the whole growth process of CdS nanowires and nanobelts.
机译:使用纯H-2作为载气,通过在低至650摄氏度的温度下简单地热蒸发CdS粉末,成功地合成了CdS纳米带和纳米线。产物的形态可通过调节沉积参数方便地控制。材料的电子显微镜研究表明,单晶CdS纳米线的直径为200 nm,长度为几十微米,纳米带的宽度为100-200 nm,厚度为30 nm,长度为数十微米。高分辨率透射电子显微镜显示,纳米带与沿[0001]方向生长的纳米线不同,具有三种类型的生长方向:[2(1)在bar(1)在bar0以上],[01(1 )超过bar0]和[0001]。事实证明,还原性载气(例如氢气)在CdS纳米线和纳米带的整个生长过程中起着重要作用。

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