Continuous scaling of CMOS technology has enabled dramatic performance enhancement of CMOS devices and has provided speed, power, and density improvement in both digital and analog circuits. CMOS millimeter-wave applications operating at more than 50GHz frequencies has become viable in sub-100nm CMOS technologies, providing advantages in cost and high density integration compared to other heterogeneous technologies such as SiGe and III-V compound semiconductors. However, as the operating frequency of CMOS circuits increases, it becomes more difficult to obtain sufficiently wide operating ranges for robust operation in essential analog building blocks such as voltage-controlled oscillators (VCOs) and frequency dividers. The fluctuations of circuit parameters caused by the random and systematic variations in key manufacturing steps become more significant in nano-scale technologies. The process variation of circuit performance is quickly becoming one of the main concerns in high performance analog design. In this thesis, we show design and analysis of a VCO and frequency divider operating beyond 70GHz in a 65nm SOI CMOS technology. The VCO and frequency divider employ design techniques enlarging frequency operating ranges to improve the robustness of circuit operation. Circuit performance is measured from a number of die samples to identify the statistical properties of performance variation. A back-propagation of variation (BPV) scheme based on sensitivity analysis of circuit performance is proposed to extract critical circuit parameter variation using statistical measurement results of the frequency divider. We analyze functional failure caused by performance variability, and propose dynamic and static optimization methods to improve parametric yield. An external bias control is utilized to dynamically tune the divider operating range and to compensate for performance variation. A novel time delay model of a differential CML buffer is proposed to functionally approximate the maximum operating frequency of the frequency divider, which dramatically reduces computational cost of parametric yield estimation. The functional approximation enables the optimization of the VCO and frequency divider parametric yield with a reasonable amount of simulation time.
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机译:CMOS技术的不断扩展已经实现了CMOS器件性能的显着提高,并在数字和模拟电路中提供了速度,功率和密度的提高。在低于100nm的CMOS技术中,工作于50GHz以上频率的CMOS毫米波应用已经成为可行的方法,与诸如SiGe和III-V化合物半导体等其他异构技术相比,该技术在成本和高密度集成方面具有优势。但是,随着CMOS电路工作频率的增加,在诸如压控振荡器(VCO)和分频器之类的基本模拟构件中,要获得足够宽的工作范围以实现稳健工作变得更加困难。由关键制造步骤中的随机和系统变化引起的电路参数波动在纳米技术中变得更加明显。电路性能的工艺变化迅速成为高性能模拟设计中的主要问题之一。在本文中,我们展示了在65nm SOI CMOS技术中工作在70GHz以上的VCO和分频器的设计和分析。 VCO和分频器采用了扩大频率工作范围的设计技术,以提高电路工作的稳定性。从许多芯片样品中测量电路性能,以识别性能变化的统计特性。提出了一种基于电路性能敏感性分析的变分反向传播(BPV)方案,利用分频器的统计测量结果提取关键电路参数的变化。我们分析了性能可变性引起的功能故障,并提出了动态和静态优化方法来提高参数产量。利用外部偏置控制来动态调整分频器的工作范围并补偿性能变化。提出了一种新型的差分CML缓冲器的时延模型,以在功能上逼近分频器的最大工作频率,从而大大降低了参数收益估算的计算成本。通过函数逼近,可以在合理的仿真时间内优化VCO和分频器的参数产量。
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