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Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

机译:蚀刻诱导微波在氮化钛超导体中的损耗   谐振器

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摘要

We have investigated the correlation between the microwave loss andpatterning method for coplanar waveguide titanium nitride resonators fabricatedon Si wafers. Three different methods were investigated: fluorine- andchlorine-based reactive ion etches and an argon-ion mill. At high microwaveprobe powers the reactive etched resonators showed low internal loss, whereasthe ion-milled samples showed dramatically higher loss. At single-photon powerswe found that the fluorine-etched resonators exhibited substantially lower lossthan the chlorine-etched ones. We interpret the results by use of numericallycalculated filling factors and find that the silicon surface exhibits a higherloss when chlorine-etched than when fluorine-etched. We also find frommicroscopy that re-deposition of silicon onto the photoresist and side walls isthe probable cause for the high loss observed for the ion-milled resonators
机译:我们研究了在硅晶片上制造的共面波导氮化钛谐振器的微波损耗与图案化方法之间的相关性。研究了三种不同的方法:基于氟和氯的反应性离子蚀刻和一个氩离子磨。在高微波探针功率下,电抗蚀刻谐振器显示出较低的内部损耗,而离子铣削样品显示出明显更高的损耗。在单光子功率下,我们发现氟蚀刻的谐振器表现出比氯蚀刻的谐振器低得多的损耗。我们通过使用数值计算的填充因子来解释结果,并发现氯蚀刻时的硅表面比氟蚀刻时的硅表面损失更高。我们还从显微镜下发现,将硅重新沉积到光致抗蚀剂和侧壁上是造成离子铣谐振器高损耗的可能原因。

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