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Indirect bonding of Ni-electroless plated AlN and Cu by hot pressing method

机译:热压法间接镀Ni化学镀AlN和Cu

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摘要

[[abstract]]The electroless Ni (EN) plating method was employed to metallize the AlN ceramic substrates. The EN-plated AlN substrate was bonded with the Cu foil to form a sandwich-like AlN-EN/Cu/EN-AlN assembly by hot pressing in vacuum with a pressure of 6.5 MPa for 30 min. For the bonding temperature below the Ni-P eutectic temperature of EN at 880°C, the samples were bonded through solid state diffusion. On the other hand, the samples were bonded via a liquid phase media through both wetting and diffusion if the bonding temperature was above 880°C. An optimum adhesion strength around 10 MPa occurred within bonding temperature range 600-700°C. The fracture took place in the EN/Cu interface for samples bonded below 600°C, while fracture took place in the AlN/EN interface above 700°C, The increasing temperature enhanced interdiffusion of Cu and EN to form a strong bond, yet resulted in a large residual thermal stress in the AlN/EN interface. The bonded samples with as-received AM exhibited higher adhesion strength than those with polished AlN because there existed a residual compression perpendicular to the AlN/EN interface at surface irregularities in the as-received AlN, which resulted in an additional shear strength offset in the adhesion test. The adhesion strength of samples with etched AlN was the highest as compared to those of as-received and polished AlN, although the surface roughness of the etched AlN was the same as that of the as-received one. It is argued that the etched surface of AlN with micro-etched holes provides the anchor sites for interlocking with the EN film, which results in a good mechanical bonding in the joint. However, a mechanical trimming on the edges of bonded samples would damage the joint, and a low adhesion strength is instead observed
机译:[摘要]采用化学镀Ni(EN)方法对AlN陶瓷基板进行金属化。通过在真空中以6.5 MPa的压力进行30分钟的热压,将镀有EN的AlN基板与Cu箔粘合在一起,以形成夹心状的AlN-EN / Cu / EN-AlN组件。对于低于880°C EN的Ni-P共晶温度的键合温度,样品通过固态扩散进行键合。另一方面,如果结合温度高于880℃,则通过液相介质通过润湿和扩散来结合样品。在600-700°C的粘合温度范围内,最佳的粘合强度约为10 MPa。对于温度低于600°C的样品,断裂发生在EN / Cu界面,而温度高于700°C的AlN / EN界面发生断裂。温度的升高增强了Cu和EN的相互扩散,形成了牢固的键, AlN / EN界面中的残余热应力很大。原始AM的粘合样品比抛光的AlN的粘合样品具有更高的粘合强度,因为在原始AlN的表面不规则处存在垂直于AlN / EN界面的残余压缩,这导致在AlN / EN界面上出现了额外的剪切强度偏移。附着力测试。与蚀刻后的AlN相比,蚀刻后的AlN的样品的粘附强度最高,尽管蚀刻后的AlN的表面粗糙度与接受后的AlN的表面粗糙度相同。有人认为,带有微蚀孔的AlN腐蚀表面提供了与EN膜互锁的锚点,从而在接头中产生了良好的机械结合。但是,对粘合样品的边缘进行机械修整会损坏接缝,而会观察到较低的粘合强度

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  • 作者

    Chung-Daw Young;

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  • 年度 2011
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  • 原文格式 PDF
  • 正文语种 [[iso]]en
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