首页> 外文OA文献 >Meyer-Neldel rule for dark current in charge-coupled devices
【2h】

Meyer-Neldel rule for dark current in charge-coupled devices

机译:meyer-Neldel规定电荷耦合器件中的暗电流

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

We present the results of a systematic study of the dark current in each pixel of a charged-coupled device chip. It was found that the Arrhenius plot, at temperatures between 222 and 291 K, deviated from a linear behavior in the form of continuous bending. However, as a first approximation, the dark current, D, can be expressed as: D=Dₒ exp(−ΔE/kT),where ΔE is the activation energy, k is Boltzmann’s constant, and T the absolute temperature. It was found that ΔE and the exponential prefactor Dₒ follow the Meyer–Neldel rule (MNR) for all of the more than 222,000 investigated pixels. The isokinetic temperature, Tₒ, for the process was found as 294 K. However, measurements at 313 K did not show the predicted inversion in the dark current. It was found that the dark current for different pixels merged at temperatures higher than Tₒ. A model is presented which explains the nonlinearity and the merging of the dark current for different pixels with increasing temperature. Possible implications of this finding regarding the MNR are discussed.
机译:我们介绍了电荷耦合器件芯片的每个像素中暗电流的系统研究结果。发现在222 K到291 K之间的温度下的Arrhenius图偏离了连续弯曲形式的线性行为。但是,作为第一近似值,暗电流D可以表示为:D =Dₒexp(-ΔE/ kT),其中ΔE是活化能,k是玻尔兹曼常数,T是绝对温度。我们发现,对于超过222,000个调查像素中的所有像素,ΔE和指数前置因子Dₒ均遵循Meyer-Neldel规则(MNR)。发现该过程的等速温度T was为294K。但是,在313 K下的测量结果并未显示出暗电流的预测反转。发现在高于T 1的温度下,不同像素的暗电流合并。提出了一个模型,该模型解释了随着温度升高,不同像素的暗电流的非线性和合并。讨论了有关MNR的这一发现的可能含义。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号