CCBY Silicon-based Single Photon Avalanche Diodes (SPADs) are widely used as single photon detectors of visible and near infrared photons. There has however been a lack of models accurately interpreting the physics of impact ionization (the mechanism behind avalanche breakdown) for these devices. In this work, we present a statistical simulation model for silicon SPADs that is capable of predicting breakdown probability, mean time to breakdown and timing jitter. Our model inherently incorporates carriers & #x0027; dead space due to phonon scattering and allows for non-uniform electric fields. Model validation included avalanche gain, excess noise factor, breakdown voltage, breakdown probability, and timing statistics. Simulating an n on-p and a p-on-n SPAD design using our model, we found that the n-on-p design offers significantly improved mean time to breakdown and timing jitter characteristics. For a breakdown probability of 0.5, mean time to breakdown and timing jitter from the n-on-p design were 3 and 4 times smaller compared to those from the p on n design. The data reported in this paper is available from the ORDA digital repository (DOI: 10.15131/shef.data.4823248).
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