首页> 外文OA文献 >Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
【2h】

Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure

机译:铝/阳极氧化铝/铝薄膜结构中低电阻和高电阻状态下的传导机制

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

In this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. © 2012 American Institute of Physics.
机译:在这项工作中,已经研究了具有电阻切换行为的Al /阳极氧化铝/ Al结构的导电机理。低电阻状态显示出欧姆导电性,其行为类似于纯铝。这种情况可以通过在氧化铝中存在由过量的铝形成的金属丝来解释。另一方面,高阻态(HRS)显示了两种不同的状态:在低场的欧姆传导具有类似半导体的行为;在高电场下具有非欧姆传导。 HRS在低电场下的欧姆传导归因于在活化能约为0.23 eV的氧化物状态之间的电子跳跃。认为HRS在高场(最大电压低于设定电压)下的传导是由于金属Al纳米相的态中捕获到电子的能带中的电子的场增强的热激发。铝氧化物或从金属铝纳米相的势阱到导带的电子发射。 ©2012美国物理研究所。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号