Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes

摘要

The investigation of optical and strain-field properties of GaN-based light emitting diodes (LED) with micropillar geometry was done. The examination of mechanism of enhanced light output was done based on electroluminescence (EL), cathodoluminescence (CL), and Raman scattering results. The intense light emission at the periphery of the devices was shown by the optical microscope images, as a result of light scattering off the etched sidewalls.