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Dynamic cache resizing architecture for high yield SOC

机译:用于高产sOC的动态高速缓存调整大小架构

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摘要

Dynamic cache resizing coupled with Built In Self Test (BIST) is proposed to enhance yield of SRAM-based cache memory. BIST is used as part of the power-up sequence to identify the faulty memory addresses. Logic is added to prevent access to the identified locations, effectively reducingthe cache size. Cache resizing approach can solve for as many faulty locations as the end user would like, while trading off on performance. Reliability and long term effect on memory such as pMOS NBTI issue is also compensated for by running BIST and implementing cache resizing architecture, hencedetecting faults introduced over time. Since memory soft failures are worst at lower voltage operation dynamic cache resizing can be used to tradeoff power for performance. This approach supplements existing design time optimizations and adaptive design techniques used to enhance memory yield.Performance loss incurred due to the cache reduction is determined to be within 1%
机译:提出了结合内置自测(BIST)的动态缓存大小调整功能,以提高基于SRAM的缓存存储器的产量。 BIST用作加电序列的一部分,以识别故障的存储器地址。添加了逻辑以防止访问所标识的位置,从而有效地减小了高速缓存的大小。缓存大小调整方法可以解决最终用户想要的许多错误位置,同时权衡性能。通过运行BIST并实现高速缓存调整大小体系结构,可以补偿诸如pMOS NBTI问题之类的对存储器的可靠性和长期影响,从而检测随着时间的推移而引入的故障。由于存储器软故障在较低电压操作下最严重,因此可以使用动态缓存大小调整来权衡性能。该方法补充了用于提高内存产量的现有设计时间优化和自适应设计技术,并确定由于缓存减少而导致的性能损失在1%以内

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