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Packaging of Microwave Integrated Circuits Operating Beyond 100 GHz

机译：超过100 GHz的微波集成电路的封装

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Erik Daniel; Vladimir Sokolov; Scott Sommerfeldt; Jim Bublitz; Kim Olson; Barry Gilbert; Lorene Samoska; David Chow;
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年度 2008
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1. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit [J] . Osmanoglu Sinan, Ozbay Ekmel International journal of numerical modelling . 2021,第5期

机译：从模型到低噪声放大器单片微波集成电路：0.03-2.6 GHz塑料四扁平无铅包装镓 - 氮化物低噪声放大器单片微波集成电路
2. Josephson voltage standard microwave circuits operating at 10 GHz [J] . Meyer H.G., Kohler H.J. IEEE Transactions on Applied Superconductivity . 1995,第期

机译：约瑟夫森电压标准微波电路，工作频率为10 GHz
3. Josephson voltage standard microwave circuits operating at 10 GHz [J] . Meyer H.-G., Kohler H.-J. IEEE Transactions on Applied Superconductivity . 1995,第2期

机译：约瑟夫森电压标准微波电路，工作频率为10 GHz
4. Packaging of microwave integrated circuits operating beyond 100 GHz [C] . Daniel E., Sokolov V., Sommerfeldt S., High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on . 2002

机译：封装工作频率超过100 GHz的微波集成电路
5. Ka-Band and W-Band Millimeter-Wave Wideband Linear Power Amplifier Integrated Circuits at 30 GHz and 90 GHz with Greater Than 100 mW OutputPowers in Commercially-Available 0.12 Micron Silicon Germanium HBT Technology [D] . Chang, Michael S. 2017

机译：采用商用0.12微米硅锗HBT技术的30 GHz和90 GHz的Ka波段和W波段毫米波宽带线性功率放大器集成电路，输出功率超过100 mW
6. Retinal Parallel Processors: More than 100 Independent Microcircuits Operate within a Single Interneuron [O] . William N. Grimes, Jun Zhang, Cole W. Graydon, -1

机译：视网膜并行处理器：超过100独立微型单中间神经元内操作
7. 30–100-GHz Inductors and Transformers for Millimeter-Wave (Bi)CMOS Integrated Circuits [O] . Timothy O. Dickson, Student Member, Marc-andre Lacroix, 2009

机译：用于毫米波（Bi）CMOS集成电路的30–100 GHz电感器和变压器
8. Packaging of microwave integrated circuits operating beyond 100 GHz [R] . Samoska, L., Daniel, E., Sokolov, V., 2002

机译：工作在100 GHz以上的微波集成电路的封装

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