首页> 外国专利> HERMETICALLY SEALED MICROWAVE INTEGRATED CIRCUIT PHERMETICALLY SEALED MICROWAVE INTEGRATED CIRCUIT PACKAGE WITH GROUND PLANE FUSED TO PACKAGE FRAME ACKAGE WITH GROUND PLANE FUSED TO PACKAGE FRAME

HERMETICALLY SEALED MICROWAVE INTEGRATED CIRCUIT PHERMETICALLY SEALED MICROWAVE INTEGRATED CIRCUIT PACKAGE WITH GROUND PLANE FUSED TO PACKAGE FRAME ACKAGE WITH GROUND PLANE FUSED TO PACKAGE FRAME

机译:气密密封的微波集成电路气密密封的微波集成电路,带接地层,用于包装框架,带接地平面,用于包装

摘要

A hermetically sealed microwave integrated circuit package (100) includes a motherboard (102) with a ground plane (104) of aluminum-silicon alloy, a plastic/ceramic composite dielectric layer (108), a copper-nickel-gold upper layer (110), and a hard aluminum frame (122). The alloy for the ground plane is selected to allow fusion with aluminum containing less than 1 % silicon to create a hermetic seal. The ground plane is fashioned to beyond the interior and upper layers, forming a welding flange (106) that circumscribes the perimeters of the interior and upper layers. Recesses (138, 140, 142, 144, 146, and 148) are cut into the dielectric to expose the ground plane. Active devices (112 and 114) and microwave integrated circuits (MICs) are disposed within the recesses and mounted on the ground plane. The metallized upper layer is etched and patterned to create a microwave integrated circuit. The alloy flange is laser-welded to the annular lower surface of a frame made of aluminum containing less than 1 % silicon, so that the interior plastic layer, the metallized upper layer, and all active devices are within the frame. A cover (128) is made from an aluminum-silicon alloy that is selected to fuse with aluminum containing less than 1 % silicon, so as to form a hermetic seal. The cover is laser-welded to the upper annular surface of the frame. When both the flange and the cover are fused with the frame, the active devices are hermetically sealed within the frame.
机译:气密密封的微波集成电路封装(100)包括具有铝硅合金接地层(104)的母板(102),塑料/陶瓷复合介电层(108),铜镍金上层(110) )和一个坚固的铝制框架(122)。选择用于接地层的合金以允许与硅含量少于1%的铝融合以形成气密密封。接地平面的形状超出了内层和上层的范围,形成了环绕内层和上层周长的焊接法兰(106)。将凹槽(138、140、142、144、146和148)切入电介质以暴露接地层。有源器件(112和114)和微波集成电路(MIC)设置在凹槽内并安装在接地平面上。对金属化的上层进行蚀刻和图案化以产生微波集成电路。合金法兰被激光焊接到铝制框架中的环形下表面,该框架的铝含量少于1%,因此内部塑料层,金属化上层以及所有有源器件都在框架内。盖(128)由铝-硅合金制成,该铝-硅合金被选择为与包含少于1%的硅的铝融合,从而形成气密密封。盖被激光焊接到框架的上环形表面。当法兰和盖都与框架融合时,有源设备将被密封在框架内。

著录项

  • 公开/公告号WO9613059A3

    专利类型

  • 公开/公告日1996-06-27

    原文格式PDF

  • 申请/专利权人 LITTON SYSTEMS INC.;

    申请/专利号WO1995US14626

  • 发明设计人 MCKLEROY CHRISTOPHER C.;

    申请日1995-10-12

  • 分类号H01L;

  • 国家 WO

  • 入库时间 2022-08-22 03:48:55

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号