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Colloidal Synthesis and Optical Characterizations of Semiconductor Nanocrystals from Nontoxic Elements

机译:无毒元素的半导体纳米晶体的胶体合成与光学表征

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摘要

To date, the search efforts have shifted from the toxic II-VI, III-V and IV-VI semiconductors to more environmentally friendly materials. Among Group II-V semiconductors, Zn3P2 has shown to be a more benign option, similar to Group IV (Ge, Si) materials, for future applications in photovoltaics and optoelectronics. This work is dedicated to the development of wet-chemical synthetic routes of (1) Zn3P2 and (2) Group IV (Ge, Si, Si1-xGex) nanocrystals with precise control over composition, crystal structure, size and dispersity by adjusting different reaction parameters such as temperature, time and solvent composition. Different characterizations will also be employed to probe the size- and composition-dependent physical and optical properties of resulting products.The first part of this work illustrates the synthesis of luminescent Zn3P2 nanocrystals, an earth-abundant and a direct-gap semiconductor possessing high absorption coefficient and long carrier diffusion length, which uphold promising potential in many optoelectronic applications. A hot injection method by using highly reactive P and Zn precursors (P[Si(CH3)3]3 and diethyl zinc) in hexadecylamine and octadecene was developed to prepare a series of alkyl-amine-passivated tetragonal Zn3P2 crystallites with varying size sizes. Substantial blue shifts in the absorption onsets (2.11−2.73 eV) in comparison to the bulk counterpart (1.4−1.5 eV) and a clear red shift with increasing particle size indicates the quantum confinement effects. This is also consistent with the photoluminescent studies with the size-tunable maxima in the visible region (469−545 nm) as a function of growth temperature and time. The phase purity and alkyl-amine passivation of the nanocrystals were determined by structural and surface analysis, confirming the presence of N–Zn and N–P bonds on the tetragonal Zn3P2 crystallites.The second part of this works focuses on the development of a colloidal synthetic strategy of alkyl-amine capped Si1-xGex nanocrystals with control over size- and composition-dependent optical properties. Despite their high miscibility at all compositions, developing a wet-chemical synthesis of Si1-xGex alloys in the nanoscale remains a challenging task, owing to the difference of their crystallization temperatures and the high surface oxidation of Si. Thus an adapted colloidal method is utilized to fabricate single-element Ge and Si nanocrystals. Powder X-ray diffraction indicates successful production of cubic crystalline Ge and amorphous Si nanoparticles individually in oleylamine/octadecene (surfactant/solvent) mixture at 300°C. Absorption onset values of 1.28 eV and 3.11 eV are obtained for resulting Ge and Si colloids, respectively. By alloying these two materials in their nano-regime, tunable optical properties can be achieved throughout the visible to the near IR region by simply varying their elemental compositions. The success of this bandgap engineering process offers more options for new material design by taking advantage of unique properties from each component material.
机译:迄今为止,搜索工作已从有毒的II-VI,III-V和IV-VI半导体转向更环保的材料。在II-V组半导体中,对于将来在光伏和光电子领域的应用,与IV组(Ge,Si)材料相似,Zn3P2已被证明是更有益的选择。这项工作致力于开发(1)Zn3P2和(2)IV组(Ge,Si,Si1-xGex)纳米晶体的湿化学合成路线,通过调节不同的反应来精确控制组成,晶体结构,尺寸和分散性参数,例如温度,时间和溶剂组成。还将使用不同的特性来探查所得产物的尺寸和组成相关的物理和光学性质。这项工作的第一部分说明了发光的Zn3P2纳米晶体,具有高吸收性的地球富集和直接间隙半导体的合成。系数和长的载流子扩散长度,在许多光电应用中都具有广阔的前景。开发了一种在十六烷基胺和十八烯中使用高反应性P和Zn前体(P [Si(CH3)3] 3和二乙基锌)的热注射方法,以制备一系列尺寸可变的烷基胺钝化四方晶Zn3P2晶体。与本体对应物(1.4-1.5 eV)相比,吸收峰(2.11-2.73 eV)发生了明显的蓝移,并且随着粒径的增加,明显的红移表明了量子限制效应。这也与光致发光研究一致,在可见光区域(469-545 nm)内,尺寸可调最大值是生长温度和时间的函数。通过结构和表面分析确定了纳米晶体的相纯度和烷基胺钝化,确认了四方Zn3P2微晶上存在N-Zn和N-P键。本工作的第二部分着眼于胶体的发展烷基胺封端的Si1-xGex纳米晶体的合成策略,可控制尺寸和组成相关的光学性能。尽管它们在所有组成中都具有高混溶性,但由于其结晶温度和Si的高表面氧化差异,在纳米级进行湿化学合成Si1-xGex合金仍然是一项艰巨的任务。因此,采用一种适应性的胶体方法来制造单元素的Ge和Si纳米晶体。粉末X射线衍射表明,在300℃的油胺/十八烯(表面活性剂/溶剂)混合物中分别成功生产了立方晶态的Ge和非晶态的Si纳米粒子。获得的Ge和Si胶体的吸收起始值分别为1.28 eV和3.11 eV。通过将这两种材料的纳米结构合金化,只需改变它们的元素组成,就可以在整个可见光范围内实现近红外区域的可调光学性能。带隙工程工艺的成功通过利用每种成分材料的独特特性为新材料设计提供了更多选择。

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    Ho Minh Q;

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