首页> 外文OA文献 >Development of n-type polycrystalline silicon thin film solar cells on glass
【2h】

Development of n-type polycrystalline silicon thin film solar cells on glass

机译:玻璃上n型多晶硅薄膜太阳能电池的开发

摘要

It is a challenge for academics and industrialists to develop solar cells with high energy conversion efficiency and low manufacturing cost. Polycrystalline silicon thin-film solar cells on glass is a competitive photovoltaic technology in that it combines the advantages of the mature crystalline silicon technology with low material usage and large-area monolithic construction typical for the thin-film approach. The focus of this thesis is on n-type polycrystalline silicon thin-film solar cells on glass prepared by electron-beam evaporation and solid-phase crystallization. It can be categorized into two parts. The first part introduces the study on material and optimization of cell structure, as well as investigation on the post-deposition treatments. Important issues are addressed, such as absorber doping control via diffused back surface field, influence of emitter doping and thickness on cell performance, influence of absorber doping on cell performance, the effect of RTA temperature on cell performance, the effect of hydrogen passivation temperature on cell performance, and the defects induced by the hydrogen passivation. The second part is a systematic study on development of a silicon nanostructure in polycrystalline silicon thin film solar cells. The silicon nanostructure is fabricated by metal-assisted wet chemical etching. Silver nanoparticles by thermal annealing of a thin silver film are used as metal catalyst. The silicon nanostructure demonstrates excellent light trapping, which is a very critical issue for thin-film solar cells. The silicon nanostructure can be passivated by atomic layer deposited aluminium oxide, in which way the electrical property of the film is improved. In the end of this thesis, 90% short-circuit current density enhancement has been achieved by application of the silicon nanostructure, resulting in the highest current density of 23.31 mA/cm2. A highest open-circuit voltage of 503 mV has been achieved for polycrystalline silicon thin-film solar cells. The silicon nanostructure is analyzed by FDTD simulation.
机译:开发高能量转换效率和低制造成本的太阳能电池对学者和工业家来说是一个挑战。玻璃上的多晶硅薄膜太阳能电池是一种有竞争力的光伏技术,它结合了成熟的晶体硅技术的优势,材料使用率低和薄膜方法通常具有的大面积单片结构。本文的重点是通过电子束蒸发和固相结晶制备的玻璃上的n型多晶硅薄膜太阳能电池。它可以分为两部分。第一部分介绍材料的研究和细胞结构的优化,以及沉积后处理的研究。解决了重要问题,例如通过扩散的后场场控制吸收剂掺杂,发射极掺杂和厚度对电池性能的影响,吸收剂掺杂对电池性能的影响,RTA温度对电池性能的影响,氢钝化温度对电池性能的影响。电池性能以及氢钝化引起的缺陷。第二部分是对多晶硅薄膜太阳能电池中硅纳米结构发展的系统研究。硅纳米结构是通过金属辅助的湿法化学蚀刻制成的。通过银薄膜的热退火的银纳米粒子被用作金属催化剂。硅纳米结构表现出出色的光捕获能力,这对于薄膜太阳能电池而言是非常关键的问题。硅纳米结构可以通过原子层沉积的氧化铝钝化,这样可以改善薄膜的电性能。在本文的最后,通过应用硅纳米结构实现了90%的短路电流密度提高,从而使最高电流密度达到23.31 mA / cm2。多晶硅薄膜太阳能电池的最高开路电压已达到503 mV。通过FDTD模拟分析硅纳米结构。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号