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Comparative study of spin injection and transport in Alq3 and Co –phthalocyanine-based organic spin valves

机译:Alq3和Co-酞菁基有机自旋阀中自旋注入和输运的比较研究

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摘要

Recent experimental reports suggest the formation of a highly spin-polarized interface ("spinterface") between a ferromagnetic (FM) Cobalt (Co) electrode and a metal-phthalocyanine (Pc) molecule. Another report shows an almost 60% giant magnetoresistance (GMR) response measured on Co/H2Pc-based single molecule spin valves. In this paper, we compare the spin injection and transport properties of organic spin valves with two different organic spacers, namely Tris(8-hydroxyquinolinato) aluminum (Alq3) and CoPc sandwiched between half-metallic La0.7Sr0.3MnO3 (LSMO) and Co electrodes. Alq3-based spin valves exhibit clear and reproducible spin valve switching with almost 35% negative GMR at 10 K, in accordance with previous reports. In contrast, cobalt-pthalocyanine (CoPc)-based spin valves fail to show clear GMR response above noise level despite high expectations based on recent reports. Investigations of electronic, magnetic and magnetotransport properties of electrode/spacer interfaces of LSMO/CoPc/Co devices offer three plausible explanations for the absence of GMR: (1) CoPc films are strongly chemisorbed on the LSMO surface. This improves the LSMO magnetic properties but also induces local traps at the LSMO interface for spin-polarized charge carriers. (2) At the Co/CoPc interface, diffusion of Co atoms into the organic semiconductor (OS) layer and chemical reactivity between Co and the OS deteriorates the FM properties of Co. This renders the Co/CoPc interface as unsuitable for efficient spin injection. (3) The presence of heavy Co atoms in CoPc leads to large spin–orbit coupling in the spacer. The spin relaxation time in the CoPc layer is therefore considerably smaller compared to Alq3. Based on these findings, we suggest that the absence of GMR in CoPc-based spin valves is caused by a combined effect of inefficient spin injection from FM contacts and poor spin transport in the CoPc spacer layer.
机译:最近的实验报告表明,在铁磁(FM)钴(Co)电极和金属酞菁(Pc)分子之间形成了高度自旋极化的界面(“ spinterface”)。另一报告显示,在基于Co / H2Pc的单分子自旋阀上测得的近60%的巨磁阻(GMR)响应。在本文中,我们比较了带有两种不同的有机垫片的有机自旋阀的自旋注入和输运特性,即,Tris(8-hydroxyquinolinato)铝(Alq3)和CoPc夹在半金属La0.7Sr0.3MnO3(LSMO)和Co之间电极。根据先前的报道,基于Alq3的自旋阀显示清晰,可重复的自旋阀开关,在10 K时负GMR接近35%。相反,基于最近的报道,尽管对钴-酞菁(CoPc)的自旋阀尽管表现出很高的期望,但仍未显示出高于噪声水平的清晰GMR响应。对LSMO / CoPc / Co器件的电极/垫片界面的电子,磁和磁传输性质的研究为不存在GMR提供了三个合理的解释:(1)CoPc膜在LSMO表面上被强烈化学吸附。这不仅改善了LSMO的磁性,而且在LSMO界面处产生了自旋极化电荷载流子的局部陷阱。 (2)在Co / CoPc界面处,Co原子扩散到有机半导体(OS)层中以及Co和OS之间的化学反应性降低了Co的FM特性。这使Co / CoPc界面不适合有效的自旋注入。 (3)CoPc中重金属Co原子的存在会导致间隔物中较大的自旋轨道耦合。因此,与Alq3相比,CoPc层中的自旋弛豫时间要短得多。基于这些发现,我们认为基于CoPc的自旋阀中不存在GMR是由于FM触点自旋注入效率低和CoPc隔离层中自旋传输不良所造成的。

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