The development of high power, high brightness semiconductor lasers is important for applications such as efficient pumping of fiber amplifiers and free space communication. The ability to couple directly into the core of a single-mode fiber can vastly increase the absorption of pump light. Further, the high mode-selectivity provided by unstable resonators accommodates single-mode operation to many times the threshold current level. The objective of this dissertation is to investigate a more efficient semiconductor-based unstable resonator design. The tapered unstable resonator laser consists of a single-mode ridge coupled to a tapered gain region. The ridge, aided by spoiling grooves, provides essential preparation of the fundamental mode, while the taper provides significant amplification and a large output mode. It is shown a laterally finite taper-side mirror (making the laser a "finite-aperture tapered unstable resonator laser") serves to significantly improve differential quantum efficiency. This results in the possibility for higher optical powers while still maintaining single-mode operation. Additionally, the advent of a detuned second order grating allows for a low divergent, quasicircular output beam emitted from the semiconductor surface, easing packaging tolerances, and making two dimensional integrated arrays possible. In this dissertation, theory, design, fabrication, and characterization are presented. Material theory is introduced, reviewing gain, carrier, and temperature effects on field propagation. Coupled-mode and coupled wave theory is reviewed to allow simulation of the passive grating. A numerical model is used to investigate laser design and optimization, and effects of finite-apertures are explored. A microfabrication method is introduced to create the FATURL in InAlGaAs/-InGaAsP/InP material emitting at about 1410 nm. Fabrication consists of photolithography, electron-beam lithography, wet etch and dry etching processes, metal and dielectric electron-beam evaporation, and rapid-thermal annealing. FATURLs are compared to infinite aperture TURLs, and show significant improvements in differential quantum efficiency (more than 40%) under pulsed-current operation. Far-field measurements show diffraction-limited divergence up to at least 2.3 x Ith, and spectral characteristics show good control over the longitudinal mode spectrum. Finally, several modifications to the laser design and fabrication are presented to improve laser performance.
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机译:高功率,高亮度半导体激光器的开发对于诸如光纤放大器的有效泵浦和自由空间通信之类的应用非常重要。直接耦合到单模光纤芯中的能力可以极大地增加泵浦光的吸收。此外,不稳定谐振器提供的高模式选择性可将单模式操作适应至阈值电流水平的许多倍。本文的目的是研究一种更有效的基于半导体的不稳定谐振器设计。锥形不稳定谐振器激光器由耦合到锥形增益区域的单模脊组成。脊由变质的凹槽辅助,为基本模式提供了必要的准备,而锥度则提供了显着的放大和大输出模式。示出了横向有限的锥形侧镜(使激光器成为“有限孔径锥形不稳定谐振器激光器”)用于显着提高微分量子效率。这导致更高的光功率,同时仍保持单模运行的可能性。另外,失谐的二阶光栅的出现允许从半导体表面发出低发散的准圆形输出光束,减轻了封装公差,并使二维集成阵列成为可能。本文介绍了理论,设计,制造和表征。介绍了材料理论,回顾了增益,载流子和温度对场传播的影响。回顾了耦合模式和耦合波理论,以模拟无源光栅。使用数值模型来研究激光的设计和优化,并研究有限孔径的影响。引入了微细加工方法以在发射约1410 nm的InAlGaAs / -InGaAsP / InP材料中创建FATURL。制造包括光刻,电子束光刻,湿法蚀刻和干法蚀刻工艺,金属和电介质电子束蒸发以及快速热退火。 FATURLs与无限孔径TURLs进行了比较,并且在脉冲电流操作下,其差分量子效率(大于40%)有了显着提高。远场测量显示衍射极限散度至少达到2.3 x Ith,并且光谱特性显示出对纵模光谱的良好控制。最后,提出了对激光器设计和制造的几种修改,以提高激光器的性能。
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