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Emission, kinetic and magnetic phenomena in rare-earth and transition metal doped ZnSe single crystals

机译:稀土和过渡金属掺杂的ZnSe单晶的发射,动力学和磁现象

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摘要

In this work emission, optical, electrical and magnetic properties of the d- and f- elements doped zinc selenide crystals were investigated within a wide temperature range. Doping was performed in various technological processes: during the growth by chemical vapor transport method; by thermal diffusion from the Bi or Zn melt. Concentration of the doping impurity in the crystals was controlled by amount of the dopant in the source material or by its concentration in the doping media. Special interest in the work was paid to the influence of the different concentrations of Cr and Yb impurities on ZnSe crystals’ properties, correlations between observed effects and similarities with the Ni, Mn and Gd dopants are analysed.Possibility of formation of the excitons bound to the doping d-ions was shown. In contrast to this, it was observed that f-elements do not bound excitons, but prevent formation of excitons bound to some uncontrolled impurities. A mechanism of Cr doping impurity interaction with background impurities and zinc selenide structural defects was proposed based on experimental data. An assumption about resonant energy transfer between double charged chromium ions and complexes based on crystals’ vacancy defects was made. A correlation between emission and magnetic properties of the d- ions doped samples was established. Based on this correlation a mechanism explaining the concentration quench of the emission was proposed.It was found that f-ions bind electrically active shallow and deep donor and acceptor states of background impurity to electrically neutral complexes. This may be observed as “purification” of ZnSe crystals by doping with the rare-earth elements, resulting i tendency of the properties of f-ion doped crystals to the properties of intrinsic crystals, but with smaller concentration of uncontrolled native and impurity defects. A possible interpretation of this effect was proposed. It was shown that selenium substituting impurities decrease efficiency of the Yb doping. Based on this experimental results an attempt to determine ytterbium ion surroundings in the crystal lattice was made. It was shown that co-doping of zinc selenide crystals with the d- and f- ions leads to the combination of the impurities influence on the material’s properties. On the basis of obtained data an interaction mechanism of the d- and f-elements co-dopants was proposed. Guided by the model of the ytterbium ion incorporation in the selenide sublattice of the ZnSe crystals, an assumption about stabilization of single charged chromium ions in the zinc sublattice crystal nodes, by means of formation of the local charge compensating clusters, was made.
机译:在这项工作中,研究了在宽温度范围内掺杂d和f元素的硒化锌锌晶体的光学,电和磁性能。在各种工艺过程中进行掺杂:在生长过程中通过化学气相传输法;通过Bi或Zn熔体的热扩散。晶体中掺杂杂质的浓度通过源材料中掺杂剂的量或掺杂剂在掺杂介质中的浓度来控制。工作中特别关注了不同浓度的Cr和Yb杂质对ZnSe晶体性能的影响,分析了观察到的效应之间的相关性以及与Ni,Mn和Gd掺杂剂的相似性。显示了掺杂的d离子。与此相反,观察到f-元素不结合激子,但阻止形成结合到一些不受控制的杂质的激子。根据实验数据,提出了Cr掺杂杂质与背景杂质和硒化锌结构缺陷相互作用的机理。基于晶体的空位缺陷,对双电荷铬离子与络合物之间的共振能量转移进行了假设。建立了掺杂d离子的样品的发射和磁性之间的相关性。基于这种相关性,提出了解释发射浓度猝灭的机理。发现f-离子将背景杂质的电活性浅和深施主和受主状态与电中性配合物结合。通过掺杂稀土元素可以观察到这是ZnSe晶体的“纯化”,导致f离子掺杂的晶体的特性趋向于本征晶体的特性,但未控制的天然缺陷和杂质缺陷的浓度较小。建议对此效应进行可能的解释。结果表明,硒替代杂质会降低Yb掺杂的效率。基于该实验结果,尝试确定晶格中的ion离子周围环境。结果表明,硒化锌晶体与d和f离子共掺杂会导致杂质的组合对材料性能产生影响。基于获得的数据,提出了d元素和f元素共掺杂剂的相互作用机理。根据ofSe硒化亚晶格中掺入y离子的模型,通过局部电荷补偿团簇的形成,对单电荷铬离子在锌亚晶格晶体节点中的稳定性进行了假设。

著录项

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    Radevici Ivan;

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  • 年度 2015
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  • 原文格式 PDF
  • 正文语种 en
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