Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.

摘要

The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV. Traditional photovoltaic materials, such as Si and GaAs, are not appropriate to produce IB devices because their gaps are too narrow. To overcome this problem, we propose the implementation of a multi-junction device consisting of an IBSC combined with a single gap cell. We calculate the efficiency limits using the detailed balance model and conclude that they are very high (> 60% under maximum concentration) for any fundamental bandgap from 0.7 to 3.6 eV in the IBSC inserted in the tandem. In particular, the two-terminal tandem of a GaAs-based IBSC current matched to an optimized AlGaAs top cell has an efficiency limit as high as 64%.