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Quantum to classical transition of the charge relaxation resistance of a mesoscopic capacitor

机译:介观电容器的电荷弛豫电阻的量子跃迁到经典跃迁

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摘要

We present an analysis of the effect of dephasing on the single channel charge relaxation resistance of a mesoscopic capacitor in the linear low frequency regime. The capacitor consists of a cavity which is via a quantum point contact connected to an electron reservoir and Coulomb coupled to a gate. The capacitor is in a perpendicular high magnetic field such that only one (spin polarized) edge state is (partially) transmitted through the contact. In the coherent limit the charge relaxation resistance for a single channel contact is independent of the transmission probability of the contact and given by half a resistance quantum. The loss of coherence in the conductor is modeled by attaching to it a fictitious probe, which draws no net current. In the incoherent limit one could expect a charge relaxation resistance that is inversely proportional to the transmission probability of the quantum point contact. However, such a two terminal result requires that scattering is between two electron reservoirs which provide full inelastic relaxation. We find that dephasing of a single edge state in the cavity is not sufficient to generate an interface resistance. As a consequence the charge relaxation resistance is given by the sum of one constant interface resistance and the (original) Landauer resistance. The same result is obtained in the high temperature regime due to energy averaging over many occupied states in the cavity. Only for a large number of open dephasing channels, describing spatially homogenous dephasing in the cavity, do we recover the two terminal resistance, which is inversely proportional to the transmission probability of the QPC. We compare different dephasing models and discuss the relation of our results to a recent experiment.
机译:我们提出移相对线性低频状态下介观电容器的单通道电荷弛豫电阻的影响分析。电容器由一个空腔组成,该空腔通过连接到电子存储库的量子点触点和耦合到栅极的库仑(Coulomb)组成。电容器处于垂直的强磁场中,因此只有一个(自旋极化)边缘状态(部分)通过触点传输。在相干极限中,单通道接触的电荷弛豫电阻与接触的传输概率无关,并且由一半的电阻量子给出。通过在导体上连接一个虚拟探针来模拟导体中的相干损耗,该探针不会产生净电流。在非相干极限中,可以预期的电荷弛豫电阻与量子点接触的传输概率成反比。然而,这样的两个最终结果要求散射在两个电子储库之间,这提供了完全的非弹性松弛。我们发现,腔中单个边缘状态的移相不足以产生界面电阻。结果,电荷松弛电阻由一个恒定的界面电阻和(原始)Landauer电阻之和给出。由于在腔体中许多占据状态的能量平均,因此在高温状态下可获得相同的结果。仅对于大量开放的移相通道,它们描述了空腔中的空间均匀移相,我们才能恢复两个终端电阻,该电阻与QPC的传输概率成反比。我们比较了不同的移相模型,并讨论了我们的结果与最新实验之间的关系。

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